发明名称 Semiconductor memory device for controlling reservoir capacitor
摘要 A semiconductor memory device is provided. Especially, there is disclosed a technique capable of increasing a net die by employing a cell capacitor as a reservoir capacitor according to a set mode. The semiconductor memory device of the present invention uses the cell capacitor as the reservoir capacitor in a normal mode, and prevents each voltage from being applied to the cell capacitor in a burn-in test mode. The voltage applied to the cell capacitor or MOS transistor can be adjusted according to the set mode.
申请公布号 US2007070724(A1) 申请公布日期 2007.03.29
申请号 US20060528224 申请日期 2006.09.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JANG CHAE-KYU
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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