发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION THEREOF |
摘要 |
<p>A semiconductor device includes a substrate formed of a single crystal. a silicon carbide layer disposed on a surface of the single crystal substrate and an intermediate layer disposed on a surface of the silicon carbide layer and formed of a Group III nitride semiconductor, wherein the silicon carbide layer is formed of a cubic crystal stoichiometrically containing silicon copiously and the surface thereof has a (3 x 3) reconstruction structure. The semiconductor device is fabricated by a method including a first step of blowing a hydrocarbon gas on the surface of the substrate, thereby inducing adsorption of hydrocarbon thereon, a second step of heating the substrate having adsorbed the hydrocarbon to a temperature exceeding a temperature used for the adsorption of the hydrocarbon while irradiating the surface of the substrate with electrons and consequently giving rise to a silicon carbide layer formed of a cubic crystal stoichiometrically containing silicon copiously and provided with a surface having a (3 x 3) reconstruction structure and a third step of supplying a gaseous raw material containing nitrogen and a gaseous raw material containing a Group III element to the surface of the silicon carbide layer and consequently giving rise to the intermediate layer formed of the Group III nitride semiconductor.</p> |
申请公布号 |
WO2007034761(A1) |
申请公布日期 |
2007.03.29 |
申请号 |
WO2006JP318455 |
申请日期 |
2006.09.12 |
申请人 |
SHOWA DENKO K.K.;UDAGAWA, TAKASHI |
发明人 |
UDAGAWA, TAKASHI |
分类号 |
H01L21/20;H01L21/205;H01L21/338;H01L29/778;H01L29/812;H01L33/00;H01L33/16 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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