| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light-emitting element provided with a positive electrode excellent in adhesiveness, having favorable translucency, having low contact resistance and excellent in current dispersion performance even if electron beam irradiation, high-temperature annealing or alloying thermal treatment in a hydrogen atmosphere is not executed. <P>SOLUTION: An ohmic contact layer 107 and an adhering layer 106 are separately formed on a p-type semiconductor layer 105, and a substrate 110 is formed by plating, and thus, excellent ohmic junction can be formed and the substrate can be prevented from being peeled when it is formed by plating. In this way, a semiconductor light-emitting element 1 which can be stably manufactured with high quality and has positive and negative electrodes arranged thereon can be obtained. Also, the same effect can be obtained in such a way that an ohmic contact layer is formed on the p-type semiconductor layer, an insulating protective layer is formed on an n-type semiconductor layer and a light-emitting layer, an adhering layer is formed and metal plate is formed by plating. <P>COPYRIGHT: (C)2007,JPO&INPIT |
