| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which allows an improvement in brightness even if an n electrode is formed on the mounting surface side of a conductive board. <P>SOLUTION: In the semiconductor light-emitting element 1, on one surface of the conductive board 2, an n-type semiconductor layer 3a, a light-emitting layer 3b, and a p-type semiconductor layer 3c are formed collectively as a semiconductor layer 3, and a contact electrode 4 and a p electrode 6 are formed on the semiconductor layer 3. On the other surface of the board 2, the n electrode 7 is formed. The n electrode 7 is composed of four ohmic electrodes 7a formed at corners of the rectangularly shaped board 2, and a reflective electrode 7b which covers the ohmic electrodes 7a and is formed over the entire part of the other surface of the board 2. The p electrode 6 and the ohmic electrode 7a are separated across the board 2 and the semiconductor layer 3, thus being prevented from overlapping each other. <P>COPYRIGHT: (C)2007,JPO&INPIT |
