| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor which prevents cross talk and inhibits a dark current, and a method for manufacturing it. SOLUTION: The sensor comprises a first conductive type substrate 110 in which a trench is formed, a first conductive type channel stop layer 115 formed along a wall surface of the trench by epitaxial growth, an element separating film 130 which is formed on the surface of the channel stop layer 115 for filling the trench, a second conductive type photo diode 124 formed under the surface of the substrate 110 adjacent to one side of the channel stop layer 115, and a transfer gate 123 for transmitting optical charges generated by the photo diode 124 which is formed on the surface of the top of the substrate 110 adjacent to the photo diode 124. COPYRIGHT: (C)2007,JPO&INPIT
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