发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device with which a via hole can be formed with simple positioning. SOLUTION: The manufacturing method has a process for forming a semiconductor integrated circuit on a surface 11 of a wafer 1, a process for forming the via hole 3 in a ground electrode (or wiring) 2 formed on the surface 11 of the wafer 1 and in the wafer 1 below it, a process for embedding an embedded metal layer 4 in the via hole 3, a process for thinning the wafer 1 from the rear face of the wafer 1 and exposing the embedded metal layer 4, and a process for forming a ground layer 5 on the rear face 12 of the wafer 1. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007081309(A) 申请公布日期 2007.03.29
申请号 JP20050270487 申请日期 2005.09.16
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 NISHIMURA KAZUMI;TOKUMITSU MASAMI;AKEYOSHI TOMOYUKI
分类号 H01L21/3205;H01L23/52 主分类号 H01L21/3205
代理机构 代理人
主权项
地址