SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To suppress a sub-threshold leak current while increasing a threshold voltage of a back channel in an N-type MOS transistor. SOLUTION: An Al-containing silicon layer 31 is formed on the interface in-between a sapphire wafer 11 of a P-type silicon layer 14, in which a P-type channel region 19 and a high-concentration N-type impurity region 21 are formed, in an SOS substrate 15. The Al works as an acceptor ion in the silicon layer and increases the threshold voltage of the back channel in the N-type MOS transistor. COPYRIGHT: (C)2007,JPO&INPIT