MONOLITHIC TWO WAVELENGTH SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser where sufficient disordering in an active layer of an infrared semiconductor laser occurs when a red semiconductor laser and the infrared semiconductor laser are disposed on a single substrate and an end face window structure is to be formed. SOLUTION: Hydrogen concentration (1.5e18 cm-3) of the fourth cladding layer 110 of the infrared semiconductor laser is higher than hydrogen concentration (1e18 cm-3) of the second cladding layer 105 in the first semiconductor laser red semiconductor laser. COPYRIGHT: (C)2007,JPO&INPIT