| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic transistor with high electric characteristics by preventing an insulation layer of a channel interface from being damaged even with a strong organic solvent applied which can dissolve a highly movable low molecular weight material. SOLUTION: The organic transistor includes a gate electrode, a gate insulation layer consisting of first and second layers, a source electrode, a drain electrode and an organic semiconductor layer. The second layer is made of a material different from that of the first layer. Part of a region (a) on one of surfaces of the first layer is in contact with part of the source and drain electrodes. Part of a region (b) on one of surfaces of the second layer is in contact with part of a region (c) other than the region (a) of the first layer. Part of a region (d) on the surface opposite to the surface of the second layer is in contact with the organic semiconductor layer. Surface free energy of the part of the region (a) on the surface of the first layer is 50 mN/m or higher, and surface free energy of a region (e) other than the region (a) on the surface of the first layer is 40 mN/m or less. COPYRIGHT: (C)2007,JPO&INPIT
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