| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film-forming apparatus for forming a ZnO thin film which has resistivity decreased to such an extent as to be usable in a transparent electrode for a liquid crystal display. SOLUTION: The thin film-forming apparatus has a structure for carrying out the steps of: vaporizing a Zn material which is a material to be layered, from a vaporizing means 27; oxidizing the vaporized Zn material with micro-wave oxygen plasma 25; depositing a ZnO compound on a glass substrate 30 to form the thin film; and exposing the formed ZnO thin film to micro-wave hydrogen plasma to decrease the resistivity. Thus, the thin film-forming apparatus can form the ZnO thin film having electroconductivity. COPYRIGHT: (C)2007,JPO&INPIT
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