摘要 |
The uniformity of a plasma distribution having a tendency to peak toward the axis of a processing chamber is improved by positioning a hollow body on the chamber axis with an open end facing the processing space. The hollow body controls the distribution of the plasma away from the center and allows plasma at the center. The geometry of the hollow body can be optimized to render the plasma uniform for given conditions. In combined deposition and etch processes, such as simultaneous and sequential etch and iPVD processes, the hollow body provides for a uniform plasma for etching while allowing deposition parameters to be optimized for deposition.
|