MULTI-BIT FLASH MEMORY DEVICE HAVING IMPROVED PROGRAM RATE

摘要

A method is provided for programming a nonvolatile memory array (102) including an array of memory cells (201), where each memory cell (201) includes a substrate (315), a control gate (328), a charge storage element (322) having at least two charge storage areas (432, 433) for storing at least two independent charges, a source region (203) and a drain region (202). The method includes designating at least one memory cell as a high-speed memory cell (802) and pre-conditioning the high-speed memory cells (201) by placing a first of the at least two charge storage areas (432, 433) into a programmed state (804), and subsequently enabling the programming on the second area with much higher rate.