SEMICONDUCTOR DEVICE USING SELECTIVE EPITAXIAL GROWTH LAYER AND METHOD FOR MANUFACTURING THE SAME BY INTERPOSING SILICON GERMANIUM EPITAXIAL LAYER BETWEEN SILICON EPITAXIAL LAYERS

摘要

Semiconductor devices are provided having a selective epitaxial growth layer that exhibits suppressed lateral growth. These semiconductor devices may include a semiconductor substrate having a silicon region, and an epitaxial growth layer formed on the silicon region. The epitaxial growth layer may comprise alternatively stacked silicon and silicon germanium epitaxial layers. The silicon germanium epitaxial layer may be thinner than the silicon epitaxial layers.