发明名称 SEMICONDUCTOR DEVICE AND ITS FABRICATION PROCESS
摘要 <P>PROBLEM TO BE SOLVED: To reduce noise characteristics and crosstalk by electrically isolating the anode and cathode of a photodiode from a substrate completely. <P>SOLUTION: In the semiconductor device 1 having a plurality of photodiodes 20 formed on a semiconductor substrate 11, cathodes 22 and a common anode 21 of the plurality of photodiodes 20(20a, 20b) are formed electrically independently from the semiconductor substrate 11. The plurality of photodiodes 20 have a common anode 21 and a plurality of isolated cathodes 22 and the output from the common anode 21 is handled equivalently to the summing output from the plurality of divided photodiodes 20. Alternatively, the plurality of photodiodes have a common cathode and a plurality of isolated anodes and the output from the common cathode is handled equivalently to the summing output from the plurality of divided photodiodes. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007080905(A) 申请公布日期 2007.03.29
申请号 JP20050263366 申请日期 2005.09.12
申请人 SONY CORP 发明人 ARAI CHIHIRO
分类号 H01L31/10;H01L21/76;H01L21/761;H01L21/762;H01L27/12;H01L27/146 主分类号 H01L31/10
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