| 摘要 |
PROBLEM TO BE SOLVED: To provide an internal voltage generation device of a semiconductor integrated circuit capable of controlling each internal voltage level in accordance with a temperature condition and preventing the deterioration of the operation performance of a semiconductor integrated circuit device. SOLUTION: At least one variable reference voltage generation means for generating a base reference voltage that rises or drops in accordance with a change in temperature, at least one level shift means for transforming the base reference voltage output from each of the at least one variable reference voltage generation means into at least one or more reference voltages for generating the internal voltage set in advance and outputting it, and at least one internal voltage generation means for generating the internal voltage using each of the at least one or more reference voltages for generating the internal voltage output from each of the at least one level shift means are included. COPYRIGHT: (C)2007,JPO&INPIT
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