| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which is improved in memory holding properties. SOLUTION: In the nonvolatile semiconductor memory device, a charge holding part 13 is not located on an element isolation insulating film 11, so that charges injected into the charge holding part 13 on an active region hardly moves to the element isolation insulating region 11, and charge stored in the charge holding part 13 on a channel region 19 never decreases in charge density, Therefore, the semiconductor memory device of this design can be improved in memory holding properties. COPYRIGHT: (C)2007,JPO&INPIT
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