| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof in which characteristic deterioration caused by a bird's beak can be suppressed. SOLUTION: A device separation insulating film 2 is formed on the surface of a semiconductor substrate 1. At this time, regarding a pattern of the device separation insulating film 2, a curvature radius of its contour is set to 0.1μm to 5μm in any portion. A well is then formed by ion implantation within a device activation area defined by the device separation insulating film 2. A gate insulating film is then formed on the surface of the well by thermal oxidization, and a polycrystal silicon film is formed thereon. By patterning the polycrystal silicon film thereafter, a gate electrode 5 is formed. At this time, a gate width is set to 0.35μm or less. Furthermore, on a boundary of the device separation insulating film 2 and the well, the gate electrode 5 is formed into a hammer head shape to have a protruding portion protruded in a gate length direction. COPYRIGHT: (C)2007,JPO&INPIT
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