| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic transistor with high electric characteristics by preventing an insulation layer of a channel interface from being damaged even with a strong organic solvent applied which can dissolve a highly movable low molecular weight material. SOLUTION: A method of manufacturing the organic transistor having at least a gate electrode, a gate insulation layer consisting at least of first and second layers, a source electrode, a drain electrode and an organic semiconductor layer includes steps of forming a first layer on the gate electrode, a step of irradiating ultraviolet rays to part of the surface of the first layer, a step of forming the source electrode and the drain electrode on the part with the ultraviolet rays irradiated, and a step of forming a second layer of a material different from that of the first layer at least between the source electrode and the drain electrode. COPYRIGHT: (C)2007,JPO&INPIT
|
