| 摘要 |
A delay locked loop (DLL) circuit for a synchronous dynamic random access memory (SDRAM) is provided. If a locking state is broken due to an external change such as a change of tCK or power supply voltage, indicating that a delay of a delay replication modeling unit involved in a DRAM is abruptly changed, the locking state can be recovered within a certain time, e.g., 200 tCK, by creating an internal reset signal in the DLL circuit by a circuit that monitors the state and then conducting a phase update using a rough delay value.
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