| 摘要 |
A method for forming a Ru layer for an integrated circuit by providing a patterned substrate in a process chamber, and exposing the substrate to a process gas comprising a ruthenium carbonyl precursor and a CO gas to form a Ru layer over a feature of the patterned substrate. In one embodiment, the CO partial pressure in the process chamber is varied during the exposing to control the step coverage of the Ru layer over the feature. In an alternative or further embodiment, the step coverage can be controlled by varying the substrate temperature during the exposure.
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