| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of detecting a laser beam with a simple structure. <P>SOLUTION: In the semiconductor laser device 10, a part of emitted light is absorbed and is converted into a current signal in a light reception region L3 corresponding to a p-side electrode 33 in a semiconductor layer 22. A size of the current signal has prescribed correlation with a size of output of the emitted laser beam. Thus, the current signal is inputted to an optical output operation circuit as an optical output monitor signal, for example. Consequently, a size of output of the emitted laser beam can be operated in the optical output operation circuit. Namely, the semiconductor laser device 10 is provided with a semiconductor laser 20 incorporating an optical detection mechanism in the light reception region, and it is not necessary to differently install the optical detection mechanism from the semiconductor laser. <P>COPYRIGHT: (C)2007,JPO&INPIT |
