| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device where conditions are identical between adjacent memory cells to obtain identical operation characteristics for all memory cells. <P>SOLUTION: In the nonvolatile semiconductor memory device having a dummy cell arranged in a cell string, first and second dummy cells are interposed between first and second selection gate transistors and memory cells of both ends connected in series. The first and second dummy cells are set to sizes equal to those of the transistors of the memory cell. Thus, in the nonvolatile semiconductor memory device having such a cell string structure, conditions are identical between adjacent memory cells for all the memory cells. Thus, programming and deletion characteristics are identical for all the memory cells. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
