| 摘要 |
PROBLEM TO BE SOLVED: To eliminate Fermi level pinning by adopting a process familiar to existing manufacturing processes without deteriorating device characteristics in an insulated gate semiconductor device and a manufacturing method thereof. SOLUTION: In the insulated gate semiconductor device, an amorphous structured SiO<SB>2</SB>film 4 is interposed between a high dielectric film 3 containing Hf as its constituent element and a gate electrode 5 comprising polycrystal silicon or metallic silicide, and the film 4 can achieve structural relaxation of re-netwoking with the gate electrode 5 to a degree of not causing a level of producing the Fermi level pinning in a band gap of the gate electrode 5. COPYRIGHT: (C)2007,JPO&INPIT
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