发明名称 ION-BEAM SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To stably operate an ion gun for a long period by preventing the ion gun from causing overdischarge in a grid. SOLUTION: An ion-beam sputtering apparatus for forming an insulation thin film on a substrate has: the ion gun 13 provided with the grid in a radiation end, to which voltage is applied, in a vacuum chamber 11; and a target 14 and the substrate accommodated in the vacuum chamber 11. The ion-beam sputtering apparatus comprises: a vaporizing means (vaporizing source 31) for heating and vaporizing an electroconductive material in the vacuum chamber 11; and a shielding means (cover 32) for limiting a flying direction of particles vaporized from the vaporizing means and directing them toward the radiation end of the ion gun 13. Then, the grid of the ion gun 13 has an electroconductive film formed thereon, and accordingly inhibits the overdischarge which has been caused by the deposition and sticking of the insulation film onto the grid. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007077409(A) 申请公布日期 2007.03.29
申请号 JP20050262668 申请日期 2005.09.09
申请人 JAPAN AVIATION ELECTRONICS INDUSTRY LTD 发明人 NISHIMOTO KEIJI
分类号 C23C14/46 主分类号 C23C14/46
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