| 摘要 |
A phase-change optical disk includes a layer structure including a ZnS-SiO<SUB>2 </SUB>first dielectric layer, an oxynitride second dielectric layer including SiHfON, a ZnS-SiO<SUB>2 </SUB>third dielectric layer, a GeN interface layer, a Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5 </SUB>recording layer, a GeN interface layer, a ZnS-SiO<SUB>2 </SUB>dielectric layer, and a reflective layer, which are consecutively deposited on a transparent substrate. The relationship between refractive indexes of the first through third dielectric layers allows the optical absorption rate in the amorphous state of the recording layer to be lower than in the crystal state thereof.
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