| 摘要 |
A method for fabricating semiconductor wafers using physical vapor deposition. The method includes maintaining a substrate on a susceptor in a chamber. The substrate has a face positioned within a vicinity of a target material, which is within the chamber. The target member comprises a first side and a second side. Preferably, the first side is positioned toward the face of the substrate. The method includes operating a magnet device fixed about a rotating member, which is coupled to the chamber and is coupled to a drive motor, which is coupled to a driver. A magnet device is positioned from a center region of the rotating member by a predetermined dimension. The method includes moving the magnet device in an annular manner about the center region using the rotating member. The magnet device is rotated at a velocity v and influences a spatial region, which is positioned overlying the second side of the target. The method also includes capturing information associated with an electromagnetic energy field associated with the moving magnet device at the velocity v. The method includes processing at least a portion of the information to determine if the electromagnetic energy field is within one or more predetermined parameters. The method transfers one or more signals to the driver to adjust the velocity of the moving magnetic device to cause a change to the electromagnetic energy field.
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