| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the wiring flexibility can be increased easily without fear of failures, such as short circuit, and the change of the wiring can be performed easily in a short time, and to provide a method for manufacturing it and a wire bonding chip size package (WBCSP) equipped with it. <P>SOLUTION: In the WBCSP, a pad 32 for wiring and a pad for a bump are formed on a silicon substrate, and a bump electrode 36 is formed on the pad for the bump through a post. A cooper rewiring layer 37 is disposed on the silicon substrate, and the bonding wire 38 is disposed above the copper rewiring layer 37, respectively. The copper rewiring layer 37 and the bonding wire 38 are connected to one bump electrode 36. One pad 32 and two bump electrodes 36 are connected to the bonding wire 38, respectively. <P>COPYRIGHT: (C)2007,JPO&INPIT |
