| 摘要 |
<P>PROBLEM TO BE SOLVED: To mount a reflecting film having high reflection factor and high accuracy with respect to a laser outgoing unit for outgoing blue-infrared light with wavelength of 350-1,200 nm, on the same semiconductor substrate. <P>SOLUTION: The laser emitter 1 having a semiconductor laser element 1a belonging to blue color, a semiconductor laser element 1b belonging to red color, and a mirror unit 2 for reflecting laser light out of the laser emitter 1 are formed on the same substrate 5. Further, a first reflecting film M1 high in a reflecting factor with respect to the wavelength of blue color, and a second reflecting film M2 high in the reflection factor with respect to the wavelength of red to infrared, are formed on a plurality of regions defining the mirror unit 2 for the respective blue system semiconductor laser element 1a and the red system semiconductor laser element 1b. The first reflecting film M1 is constituted of a multi-layered film of an Al layer and a dielectric layer while the second reflecting film M2 is constituted of a metal film consisting of Au or Pt. According to this constitution, the laser emitting light having a wide wavelength region of blue-red can efficiently be reflected. <P>COPYRIGHT: (C)2007,JPO&INPIT |
