| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-sensitivity magnetic sensor with less temperature dependence, which can operate in a large temperature range, using a simple drive circuit. SOLUTION: A semiconductor magnetoresistive device has four element sections, comprising semiconductor thin film to produce magnetoresistive effect, wiring section and bonding electrodes; these four element sections producing magnetoresistive effect are connected in a bridge structure; two of those four element sections positioned on remote sides of the bridge structure are allocated in a state of vertically receiving the magnetic field of the same strength at the same time; and the element sections are connected with the bonding electrodes on the wiring section. COPYRIGHT: (C)2007,JPO&INPIT
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