| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern formation method that can perform a high throughput of wafer treatment with a process liquid containing potassium hydroxide (KOH) at a low cost by using a proper mask material. SOLUTION: A mask pattern (selective mask) is formed on a nickel (Ni) film 1 after a desired pattern is formed on a resist film 3, a selective etching can be performed on a wafer W by merely dipping the wafer W on which the film 3 and the film 1 are coated into the process liquid to treat the wafers W with high throughput at the low cost. COPYRIGHT: (C)2007,JPO&INPIT
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