| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having its enough high heat radiating performance by the method accompanied by no increase of its number of chips and its area. SOLUTION: In the semiconductor device, as a substrate 11 for forming thereby a nitride semiconductor field effect transistor, an SiC (11-20) plane having its heat conductivity nearly larger by 40% than the one of an SiC (0001) plane is so used as to obtain thereby the low thermal resistance of a chip without increasing the size and the number of chips. COPYRIGHT: (C)2007,JPO&INPIT
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