| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element or the like that can be miniaturized and can fix the magnetization of a pinned layer more stably. SOLUTION: The magnetoresistance effect element 51 includes a free layer 63, the pinned layer 59, and a non-magnetic layer 61 arranged between them. The pinned layer has an extension section 59b that is extended from the non-magnetic layer in a height direction while the non-magnetic layer is not laminated. A ferromagnetic layer 73 is provided on the extension section, and an antiferromagnetic layer 75 is provided on the ferromagnetic layer 73. The pinned layer is in a synthetic structure containing an upper ferroelectric film 65, a lower ferroelectric film 67, and a non-magnetic metal film 69. When the magnetic film thickness of the ferromagnetic layer and the upper ferromagnetic film at the extension section is set to Ms<SB>3</SB>t<SB>3</SB>, and the magnetic film thickness of the lower ferromagnetic film is set to Ms<SB>2</SB>t<SB>2</SB>, a relationship of 2*Ms<SB>2</SB>t<SB>2</SB>>Ms<SB>3</SB>t<SB>3</SB>>1/2*Ms<SB>2</SB>t<SB>2</SB>is satisfied. COPYRIGHT: (C)2007,JPO&INPIT
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