| 摘要 |
PROBLEM TO BE SOLVED: To provide a simple and effective control method of a threshold voltage characteristic in an organic semiconductor device. SOLUTION: In a method for controlling threshold voltage of the organic semiconductor device having a gate electrode (12), a gate insulating film (14), a source electrode (16), a drain electrode (18), and an organic semiconductor film (20); an absorption object (24) which consists of silane compound is formed on the source electrode (16) and the drain electrode (18). COPYRIGHT: (C)2007,JPO&INPIT
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