发明名称 |
ONE DIMENSIONAL NANOSTRUCTURES FOR VERTICAL HETEROINTEGRATION ON A SILICON PLATFORM AND METHOD FOR MAKING SAME |
摘要 |
Methods and devices are provided in which vertically integrated devices are grown in the form of semiconductor (e.g., Ge, GaAs, InGaAs, etc.) one-dimensional nanowires with typical diameter of from about 5 nm to about 50 nm and aspect ration of about 1:10. In one embodiment a nanometer-scale diameter pillar extending from a silicon substrate is employed as a "seed" for fabricating vertical, one dimensional hetero-structures (and/or hetero-devices) containing semiconductor materials with lattice and thermal expansion mismatches to silicon. |
申请公布号 |
WO2005079308(A3) |
申请公布日期 |
2007.03.29 |
申请号 |
WO2005US04424 |
申请日期 |
2005.02.14 |
申请人 |
NEW JERSEY INSTITUTE OF TECHNOLOGY |
发明人 |
TSYBESKOV, LEONID;SIRENKO, ANDREI |
分类号 |
H01L21/36;H01L21/20;H01L29/06 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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