THICK SEMI-INSULATING OR INSULATING EPITAXIAL GALLIUM NITRIDE LAYERS AND DEVICES INCORPORATING SAME
摘要
<p>Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial layer has a thickness of at least about 4 µm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive SiC substrate and an insulating or semi-insulating GaN epitaxial layer on the conductive SiC substrate. The GaN epitaxial layer has a thickness of at least about 4 µm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive GaN substrate, an insulating or semi-insulating GaN epitaxial layer on the conductive GaN substrate, a GaN based semiconductor device on the GaN epitaxial layer and a via hole and corresponding via metal in the via hole that extends through layers of the GaN based semiconductor device and the GaN epitaxial layer.</p>
申请公布号
WO2006110204(A3)
申请公布日期
2007.03.29
申请号
WO2006US04353
申请日期
2006.02.08
申请人
CREE, INC.;SAXLER, ADAM WILLIAM;WU, YIFENG;PARIKH, PRIMIT;MISHRA, UMESH;SMITH, RICHARD PETER;SHEPPARD, SCOTT T.
发明人
SAXLER, ADAM WILLIAM;WU, YIFENG;PARIKH, PRIMIT;MISHRA, UMESH;SMITH, RICHARD PETER;SHEPPARD, SCOTT T.