| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology for reducing the disturbances of a memory cell in a nonvolatile memory such as a flash memory. <P>SOLUTION: The nonvolatile memory equipped with a plurality of memory cells enabling electric writing and erasing, and a word line WL and a bit line connected to the plurality of memory cells includes a means for switching a voltage applied to an unselected word line WL according to an operation mode. For voltages (VUW) applied to the unselected word line WL, a voltage in an erasing mode is set to -2V, and voltages in the other modes are set to -1.4V. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
