| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photo cathode, composed of a compound semiconductor, in which a wide dynamic range is realized and a gate operation at high speed is made possible, as well as an electron tube. <P>SOLUTION: The photo cathode 10 which can be applied for the electron tube is provided with a substrate 11, a light absorbing layer 14 formed on the substrate 11, composed of a compound semiconductor, and emitting photo electron from a photoemission surface 14E corresponding to light incidence, and an electrode layer 15 having an opening 15H formed on the photoemission surface 14E so that a part from the substrate 11 through the light absorbing layer 14 can have the same electric potential, and exposing the photoemission surface 14E. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
