发明名称 PLASMA TREATMENT METHOD AND APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus for keeping a sample at a constant temperature by suppressing the sample temperature change due to the secular change thereof. SOLUTION: This plasma treatment apparatus comprises a vacuum treatment vessel 101, a gas supply means 104 for supplying a treatment gas into the vacuum treatment vessel, a sample mounting electrode 107 arranged in the vacuum treatment vessel on which the sample is mounted and held, a cooling gas supply means 112 for supplying a cooling gas into the clearance between the sample mounting electrode and the sample, and an electrode temperature regulator 115 for supplying a temperature regulated coolant to the coolant passage provided in the sample mounting electrode. In the temperature controlling method for the sample mounting electrode of the plasma treatment apparatus for carrying out the plasma treatment for the sample by supplying a high-frequency power into the vacuum vessel to form the plasma, the relation between the flow rate of the cooling gas supplied to the clearance and the temperature rise of the sample is acquired for each sample subjected to the treatment beforehand, and the temperature or the flow rate of the coolant supplied to the coolant passage is regulated based on that relation and the flow rate of the cooling gas currently being supplied. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007081052(A) 申请公布日期 2007.03.29
申请号 JP20050265639 申请日期 2005.09.13
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 TAMURA SATOYUKI;MAEDA KENJI;YOSHIOKA TAKESHI;ANDO YOJI
分类号 H01L21/3065 主分类号 H01L21/3065
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