| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor layer including an offset-type transistor with improved reliability. SOLUTION: The manufacturing method includes a step of forming a first element formation region 10HV, a first element separation insulation layer 20 on a semiconductor layer 10, and forming a second element separation insulation layer 22 on a second element formation region 10LV, a step of forming a first transistor 100 on the first element formation region 10HV and forming a second transistor 200 with the same conductivity type of the channel on the second element formation region 10LV, a step of forming an impurity region 122 including a channel region 108, source and drain regions 110 and 122, an offset insulation layer 24, a first well 12 and a guard ring formation region 120a on the first element formation region 10HV, a step of forming gate insulation layers 102 and 202 and gate electrodes 104 and 204 above the first well 12 and a second well 14, and a step of forming source and drain regions 212 and 210 in the second well 14. COPYRIGHT: (C)2007,JPO&INPIT
|
