| 摘要 |
PROBLEM TO BE SOLVED: To extend the life while evading stress concentration of a semiconductor chip 1 to a second principal surface. SOLUTION: A pressure-welding semiconductor device comprises a semiconductor chip 1 equipped with a first principal surface and a second principal surface facing the first principal surface; a first electrode plate 5 joined with the first principal surface and made of a material quality with a linear expansion coefficient different from the semiconductor chip 1; and a contact terminal 2 having a surface in contact with the second principal surface of the semiconductor chip 1, and further having rigidity of a peripheral edge weaker than a central part. When the semiconductor chip 1 is bent at high temperature, a peripheral edge of a conductive plate shaped member is made likely to be deformed along the bent part. COPYRIGHT: (C)2007,JPO&INPIT
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