| 摘要 |
PROBLEM TO BE SOLVED: To reduce connection resistance between wiring layers in a semiconductor wafer. SOLUTION: A plasma ion 7 is made to collide with a convex part 4a of a target 4, a metal atom 8 is repelled out by using the target 4 where the convex part 4a is formed on a surface, and a metal film is deposited on an inner wall of a through-hole on the semiconductor wafer. Thus, the metal atom 8 can be repelled out without narrowing jump-out direction of the metal atom 8 which jumps out from a vicinity of the convex part 4a of the target 4. Consequently, step coverage of the metal film formed in the through-hole between the wiring layers can be improved, and connection resistance between the wiring layers can be reduced as a result. COPYRIGHT: (C)2007,JPO&INPIT
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