发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To carry out an orthogonal transformation of a data array, namely a matrix transformation, at high speed in a signal processing system. SOLUTION: A CAM (content reference memory) cell MCC is constituted of: first and second data storage sections 100a and 100b for storing the data; horizontal port write-in gates 102a, 102b for storing data given through a match lines pair MLT[i], MLB[i] in the data storage sections 100a, 100b at the write-in of horizontal port data; and retrieval/read-out gates 104a, 104b for driving the match lines in accordance with storage data of the data storage sections at the retrieval operation and at the read-out of the horizontal port data. The match lines are utilized as the horizontal bit lines pair, i.e. as signal lines for horizontal port access. By using the first and second data storage sections, ternary data can be stored, and a write mask function to inhibit the write-in of data to the transfer destination is obtained accordingly. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007080314(A) 申请公布日期 2007.03.29
申请号 JP20050263674 申请日期 2005.09.12
申请人 RENESAS TECHNOLOGY CORP 发明人 DOSAKA KATSUMI;ARIMOTO KAZUTAMI;SAITO KAZUNORI;NODA HIDEYUKI
分类号 G11C15/04;G06F12/00 主分类号 G11C15/04
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