| 发明名称 |
Method of sealing two plates with the formation of an ohmic contact therebetween |
| 摘要 |
The invention relates to a sealing process for two wafers ( 2, 12 ) made of semiconducting materials, comprising: a step for implantation of metallic species ( 4 ) in at least the first wafer, a step for assembly of the first and second wafer, an annealing step.
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| 申请公布号 |
US2007072391(A1) |
申请公布日期 |
2007.03.29 |
| 申请号 |
US20040584052 |
申请日期 |
2004.12.21 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
POCAS STEPHANE;MORICEAU HUBERT;MICHAUD JEAN-FRANCOIS |
| 分类号 |
H01L21/30;H01L21/18;H01L21/265;H01L21/266;H01L21/46 |
主分类号 |
H01L21/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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