发明名称 |
Semiconductor device having an interconnect with sloped walls and method of forming the same |
摘要 |
A semiconductor device having at least one lateral channel with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a lateral channel above the conductive substrate. The semiconductor device further includes a second contact above the lateral channel. The semiconductor device still further includes an interconnect having a sloped wall that connects the lateral channel to the conductive substrate. The interconnect is operable to provide a low resistance coupling between the first contact and the lateral channel. In a related but alternative embodiment, the first contact is a source contact and the second contact is a drain contact for the semiconductor device.
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申请公布号 |
US2007069286(A1) |
申请公布日期 |
2007.03.29 |
申请号 |
US20050236376 |
申请日期 |
2005.09.27 |
申请人 |
BRAR BERINDER P S;HA WONILL;VORHAUS JAMES L |
发明人 |
BRAR BERINDER P.S.;HA WONILL;VORHAUS JAMES L. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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