发明名称 SEMICONDUCTOR DEVICE
摘要 <p>At the time of a setting action (SET) to set a phase changing element into a crystal state, for example, a pulse at a voltage (Vreset) necessary for melting the element is applied at first to the phase changing element, and a pulse at a voltage (Vset) lower than the voltage (Vreset) and necessary for crystallizing the element is then applied. The magnitude of the voltage (Vset) is so changed in dependence upon the temperature of the atmosphere that the magnitude of the voltage (Vset) may become the smaller for the higher temperature (TH). This improves a writing action margin between the setting action and a resetting action (RESET) for bringing the element into an amorphous state.</p>
申请公布号 WO2007034542(A1) 申请公布日期 2007.03.29
申请号 WO2005JP17352 申请日期 2005.09.21
申请人 RENESAS TECHNOLOGY CORP.;OSADA, KENICHI;KITAI, NAOKI;KAWAHARA, TAKAYUKI;YANAGISAWA, KAZUMASA 发明人 OSADA, KENICHI;KITAI, NAOKI;KAWAHARA, TAKAYUKI;YANAGISAWA, KAZUMASA
分类号 G11C13/00;H01L27/105;H01L45/00 主分类号 G11C13/00
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