| 摘要 |
The device, an IGBT, is formed on a chip (9) of silicon consisting of a P type substrate (10) with an N type epitaxial layer (11) which contains a first P type region (13) and a termination structure. This structure comprises a first P type termination region (14) which surrounds the first region (13), a first electrode (18) in contact with the first termination region (14) and a second electrode (21) shaped in the form of a frame close to the edge of the chip and connected to a third electrode (17) in contact with the bottom of the chip. A fourth electrode made in one piece with the first electrode (18) is in contact with the first region (13). To produce an integrated diode with good electrical characteristics connected in reverse conduction between the power terminals of the IGBT, the termination structure also comprises a fifth electrode (30), in contact with the epitaxial layer (11) along a path parallel to the edge of the first termination region (14), connected to the second electrode (21), a second P type termination region (32) which surrounds the fifth electrode (30) and a sixth electrode (33), in contact with the second termination region (32), connected to the first electrode (18). <IMAGE> |
