| 摘要 |
The present invention relates to a magnetic field applied pulling method for pulling a silicon single crystal. A silicon melt is stored in a quartz crucible provided in a chamber. A horizontal magnetic field generated by a pair of exciting coils disposed so as to interpose the chamber is applied to the silicon melt. A seed crystal provided to the lower end of a wire cable is immersed in the silicon melt, and a silicon single crystal ingot is grown beneath the seed crystal elevated by pulling the wire cable while rotating the wire cable. The exciting coils are placed outside the chamber such that the centers of the exciting coils in a vertical direction are positioned upper than the surface of the silicon melt. A distance D of the vertical center of each exciting coil from the surface level of the silicon melt satisfies 0<=D<=10L where L denotes the depth of the silicon melt when the pulling of the silicon single crystal ingot is started.
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