| 摘要 |
<P>PROBLEM TO BE SOLVED: To materialize a phase change memory device having a structure with high thermal efficiency and to enable mass production of large-scale phase change memory IC by solving many problems caused by IC composition of the phase change memory. <P>SOLUTION: Both a heater electrode 111 and lead-out electrode layers 113a and 114a are brought into contact with the bottom of a phase change layer 115 consisting of GST. The electrode layers 113a and 114a are brought into contact with the bottom of a phase change layer 115 in a partially overlapping state in the region deviated from right above the contact surface (Y) of the phase change layer and a heater electrode. Further, in the region deviated from right above a heater electrode 111, contact electrodes 116 and 118 are directly connected to the lead-out electrode layer 113a and 114a. Right above the phase change region of the phase change layer, an electrode which functions as a heat dissipation fin does not exist. Phase change layers, such as GST, do not exist just under a contact electrode. <P>COPYRIGHT: (C)2007,JPO&INPIT |
