| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device and manufacturing thereof that can obtain especially a highly integrated DRAM made by going through a small number of processes and using a very minute cell area. <P>SOLUTION: A semiconductor memory device comprises: a memory cell transistor formed on a semiconductor substrate 10; an insulating film 42 covering an upper face and a side face of a gate electrode 20 of the memory cell transistor; an interlayer insulating film 36 on which a through hole 40 opened on a source diffusion layer 24 and a through hole 38 opened on a drain diffusion layer 26 are formed; a capacitor having a capacitor storage electrode 46 formed on the inner wall and the bottom of the through hole 40 and connected to the source diffusion layer 24, a capacitor dielectric film 48 covering the capacitor storage electrode 46, and a capacitor counter electrode 54 covering the capacitor dielectric film 48; and a contacting conductive film 44 formed on the inner wall and the bottom of the through hole 38 and connected to the drain diffusion layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
