发明名称 PATTERN EXPOSURE METHOD AND EXPOSURE MASK
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern exposure method superior in mass production for simultaneously exposing a planar part and a side part by enhancing resolution of exposure of the planar part. <P>SOLUTION: The pattern exposure method comprises using an exposure mask for a mask pattern on the other surface by forming a shading pattern on one surface of a transparent substrate, arranging the exposure mask so as to allow the surface of the side forming the mask pattern to oppose in parallel to the planar part, and projecting a prescribed pattern on the planar part and the side part by irradiation with light from the side forming the shading pattern in pattern exposure projecting the mask pattern on the planar part and the side part of an object to be exposed. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007078856(A) 申请公布日期 2007.03.29
申请号 JP20050264177 申请日期 2005.09.12
申请人 FUJITSU LTD 发明人 SANO SATOSHI
分类号 G03F7/20;G03F1/54 主分类号 G03F7/20
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